The preparation and characterization of the silicon oxide thin films deposited on PET substrates by radio-frequency magnetron sputtering

• Main Authors: Chien-Hua Tseng, 曾建樺
• Other Authors: Li-Shin Chang
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/01725688909376505665

碩士 === 國立中興大學 === 材料工程學研究所 === 92 === With the trends of developing lighter, thinner, shorter and smaller electronic information products, plastic materials substituting for glasses as the substrate of flat panel display can not only reduce FPD’s weight but also possess unique advantages such as high impact resistance, continuous roll to roll processing technology and flexibility. Glass substrates can prevent the permeation of water vapors and oxygen effectively but plastic substrates can’t. It would lower the device lifetime and quality. Therefore, gas barrier films would be deposited on the plastics substrates in order to solve the problem. In this study, silicon oxide films were deposited on the polyethylene terephthalate plastic substrates by reactive RF magnetron sputtering with a silicon target. Process parameters inclusive of oxygen flow ratio, work pressure, RF power density and deposition time were varied. The effects of these process parameters on the microstructure, chemical composition, surface roughness, light transmittance, water vapor transmission rate (WVTR), oxygen transmission rate (OTR) and flexible property were discussed. It is found that the silicon oxide film with the optimum protecting against vapor permeation were deposited as the oxygen flow ratio is 40%, the RF power density is 4.9 W/cm2, work pressure is 2 mTorr and deposition time is 240 min. The minimum WVTR is 2.6 g/m2-day-atm and OTR is 16.1 cc/ m2-day-atm. In the flexible test, the thicker silicon oxide films possess worse ability to defend the flexible tests. More cracks produced in thicker films during flexible tests result in higher permeation rate of water vapors and oxygen.