| Summary: | 碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 92 === Transparent and conductive ITO thin film shows low electrical resistance and high transmittance in the visible range of the optical spectrum. In commercial processes, ITO films must be crystallized with post-annealing to obtain good performance in electrical properties, but the crystalline rough surface could affect the efficiency of optoelectronic device. Besides, the low chemical activity of ITO films are also the task must be improved. In order to solve these current problems, all research workers are not only devoted to improve the film deposition processes but also developing new material. In the presence of all, the IZO film is the optimal candidate because of its high temperature stability and amorphous structure.
In this thesis, we would co-deposite the ITO-ZnO composite film by dual gun magnetron sputtering system, and observe the film structure, thermal stability and optoelectronic properties. It shows that all the deposited films have amorphous-like structure in all composition, film roughness also decrease with the increase of ZnO content. Besides, the crystalline temperature of films would increase, and the effect of surface roughness after annealing process is not remarkable. When the ZnO content increase continually, the microstructure of the co-sputtered films are improved to an amorphous-like structure even trough a post-annealing treatment up to 500℃, showed the best electrical property of 5.2×10-4Ω-cm, maintaining smooth morphology and fairly high optical transmittance over 80%.
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