| Summary: | 碩士 === 國立暨南國際大學 === 電機工程學系 === 92 === This thesis focuses on the LNA and mixer. We introduce the fundamental performance parameter of them and realize their design on-chip. A switched multi-band LNA is presented at resonant frequency of 2.4/5.2/5.8 GHz in a standard 0.18 μm CMOS process for the first time. The advantages of this LNA are small chip area, easy operation and low power consumption. A changeable current multi-band LNA is implemented in InGaP/GaAs HBT process. It is a good means in the multi-band LNA designing, which use different bias current IB to change resonant frequency. This circuit can handle three bands (0.9/1.8/2.4 GHz) and has small chip area. In the chapter 4, we propose two down-conversion micromixers. One is implemented in InGap/GaAs HBT technology. The mixer core consists of two stacked transistors, so the micromixer can operate in low voltage design. In addition, the circuit has similar performances at RF=2.4/5.2/5.8 GHz. The other is implemented in 0.35 μm SiGe BICMOS process. It achieves a good port-to-port isolation, suitable conversion gain of 1.3 dB, and high input third-order intercept point of 0.5 dBm.
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