Design and Implementation of RF Monolithic LNA and Mixer

碩士 === 國立暨南國際大學 === 電機工程學系 === 92 === This thesis focuses on the LNA and mixer. We introduce the fundamental performance parameter of them and realize their design on-chip. A switched multi-band LNA is presented at resonant frequency of 2.4/5.2/5.8 GHz in a standard 0.18 μm CMOS process for the firs...

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Main Authors: Chi-Cheng Chen, 陳志成
Other Authors: Ph.D. Yo-Sheng Lin
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/82269848025393919868
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spelling ndltd-TW-092NCNU04420182016-06-17T04:16:59Z http://ndltd.ncl.edu.tw/handle/82269848025393919868 Design and Implementation of RF Monolithic LNA and Mixer 射頻單晶低雜訊放大器和混頻器之設計與實現 Chi-Cheng Chen 陳志成 碩士 國立暨南國際大學 電機工程學系 92 This thesis focuses on the LNA and mixer. We introduce the fundamental performance parameter of them and realize their design on-chip. A switched multi-band LNA is presented at resonant frequency of 2.4/5.2/5.8 GHz in a standard 0.18 μm CMOS process for the first time. The advantages of this LNA are small chip area, easy operation and low power consumption. A changeable current multi-band LNA is implemented in InGaP/GaAs HBT process. It is a good means in the multi-band LNA designing, which use different bias current IB to change resonant frequency. This circuit can handle three bands (0.9/1.8/2.4 GHz) and has small chip area. In the chapter 4, we propose two down-conversion micromixers. One is implemented in InGap/GaAs HBT technology. The mixer core consists of two stacked transistors, so the micromixer can operate in low voltage design. In addition, the circuit has similar performances at RF=2.4/5.2/5.8 GHz. The other is implemented in 0.35 μm SiGe BICMOS process. It achieves a good port-to-port isolation, suitable conversion gain of 1.3 dB, and high input third-order intercept point of 0.5 dBm. Ph.D. Yo-Sheng Lin 林佑昇  2004 學位論文 ; thesis 99 en_US
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language en_US
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description 碩士 === 國立暨南國際大學 === 電機工程學系 === 92 === This thesis focuses on the LNA and mixer. We introduce the fundamental performance parameter of them and realize their design on-chip. A switched multi-band LNA is presented at resonant frequency of 2.4/5.2/5.8 GHz in a standard 0.18 μm CMOS process for the first time. The advantages of this LNA are small chip area, easy operation and low power consumption. A changeable current multi-band LNA is implemented in InGaP/GaAs HBT process. It is a good means in the multi-band LNA designing, which use different bias current IB to change resonant frequency. This circuit can handle three bands (0.9/1.8/2.4 GHz) and has small chip area. In the chapter 4, we propose two down-conversion micromixers. One is implemented in InGap/GaAs HBT technology. The mixer core consists of two stacked transistors, so the micromixer can operate in low voltage design. In addition, the circuit has similar performances at RF=2.4/5.2/5.8 GHz. The other is implemented in 0.35 μm SiGe BICMOS process. It achieves a good port-to-port isolation, suitable conversion gain of 1.3 dB, and high input third-order intercept point of 0.5 dBm.
author2 Ph.D. Yo-Sheng Lin
author_facet Ph.D. Yo-Sheng Lin
Chi-Cheng Chen
陳志成
author Chi-Cheng Chen
陳志成
spellingShingle Chi-Cheng Chen
陳志成
Design and Implementation of RF Monolithic LNA and Mixer
author_sort Chi-Cheng Chen
title Design and Implementation of RF Monolithic LNA and Mixer
title_short Design and Implementation of RF Monolithic LNA and Mixer
title_full Design and Implementation of RF Monolithic LNA and Mixer
title_fullStr Design and Implementation of RF Monolithic LNA and Mixer
title_full_unstemmed Design and Implementation of RF Monolithic LNA and Mixer
title_sort design and implementation of rf monolithic lna and mixer
publishDate 2004
url http://ndltd.ncl.edu.tw/handle/82269848025393919868
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