Formation of an Ultra-thin KCl Layer on the Silicon Surface
碩士 === 國立交通大學 === 物理研究所 === 92 === The thesis describes the growth of potassium chloride(KCl), and its thermal reactions on the Ge/Si(100)-2�e1 surface. Synchrotron radiation was used to excite the Ge 3d、K 3p、Cl 2p photoemission electrons. When Cl2 was exposed onto the Ge/Si(100)-2�e1 surface, Cl2 m...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d6s69d |