Low Dielectric Constant of Polyherdral Oligomeric Silisesquioxane Nanocomposite based on Epoxy Resin

• Main Authors: Chia-Ming Chan, 詹家明
• Other Authors: Feng-Chih Chang
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/41776920317922480558

碩士 === 國立交通大學 === 應用化學系所 === 92 === In this investigation, a polyhedral oligomeric silsesquioxane (POSS) with various functional groups was incorporated into the epoxy network that possessed low dielectric constant and higher thermal properties. In this thesis, we synthesized two nano-structure compounds. One is containing octa-epoxy group POSS derivative(OG) and the other is a containing with epoxy and fluoride group POSS derivative (OFG). These compounds(OG, OFG) were incorporated into the backbone of epoxy through UV curing. The thermal properties were characterized using DSC, TGA, and DMA. The dielectric constant was characterized using DEA. In dielectric property, the dielectric constant of plain resin is 3.71. For the POSS/Epoxy nanocomposites, the dielectric constant of the nanocomposite films are lower than that of plain resin and can be tuned by the amount of POSS molecules introduced in the nanocomposite film. The dielectric constant of the resultant nanocomposities are lower due to the increased free volume and less polar POSS molecules, and the micropore in the POSS molecules and the dielectric constant of OG containing epoxy resin is 2.83 and the dielectric constant of OFG containing epoxy resin is 2.76 under the same POSS particles. Due to OFG that possessed nanoporous and fluorine, it has a high efficiency to decrease the the dielectric constant of epoxy resin compared to OG. In morphology, the electron micrograps also provide POSS/Epoxy nanocomposites are microphase separation.