Apply microwave PECVD to deposit silicon thin film at low temperature.

• Main Authors: Gi-Zen Lin, 林桔仁
• Other Authors: Pe-Li Chen
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/79101927482480930214

碩士 === 國立中央大學 === 光電科學研究所 === 92 === Abstract It applies microwave PECVD to deposit silicon thin film at low temperature,searching for the best parameter of low temperature poly silicon.Our gas source are silane,hydrogen,and argon,and we study the quality of thin film by changing some parameter.After deposition,we analyse the thin film by SEM,AFM,X-Ray Diffraction,FTIR,and α-Step.We find the best parameter when silane,hydrogen,and argon flow are 1,25,and 50 sccm,respectively,microwave power and rf power are 700W and 15W.respectively,deposition time is 7 hrs.After analysing the sample, we can find grain size which is larger than 100 nm by SEM and AFM,without diffraction peak by XRD,with Si-H and Si-H2 by FTIR.