Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method
碩士 === 國立東華大學 === 材料科學與工程學系 === 92 === In this study, Ge(Se1-xSx)2 crystals with x = 0、0.2、0.4、0.6、0.8、1 were grown by vertical Bridgman method. The crystallinity and composition were investigated by X-Ray, SEM and EPMA. The energy band gap of crystals were examined by thermoreflectance (TR) and tra...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93896322221303900775 |
| Summary: | 碩士 === 國立東華大學 === 材料科學與工程學系 === 92 === In this study, Ge(Se1-xSx)2 crystals with x = 0、0.2、0.4、0.6、0.8、1 were grown by vertical Bridgman method. The crystallinity and composition were investigated by X-Ray, SEM and EPMA. The energy band gap of crystals were examined by thermoreflectance (TR) and transmission spectra measurement. The composition dependence of crystallinity, band gap, broadening parameter for Ge(Se1-xSx)2 were discussed. The values of energy band gap (Eg) for various alloy composition (x) can be fitted by an analytical expression 【Eg(x) =2.396＋0.140x＋0.616x2】。
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