Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method

Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method

碩士 === 國立東華大學 === 材料科學與工程學系 === 92 === In this study, Ge(Se1-xSx)2 crystals with x = 0、0.2、0.4、0.6、0.8、1 were grown by vertical Bridgman method. The crystallinity and composition were investigated by X-Ray, SEM and EPMA. The energy band gap of crystals were examined by thermoreflectance (TR) and tra...

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Main Authors: Chien-Yi Wu, 吳建誼
Other Authors: Ching-Cheng Wu
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/93896322221303900775
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spelling ndltd-TW-092NDHU51590092016-06-17T04:16:06Z http://ndltd.ncl.edu.tw/handle/93896322221303900775 Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method 利用垂直式Bridgman法成長硒硫化鍺晶體及其特性探討 Chien-Yi Wu 吳建誼 碩士 國立東華大學 材料科學與工程學系 92 In this study, Ge(Se1-xSx)2 crystals with x = 0、0.2、0.4、0.6、0.8、1 were grown by vertical Bridgman method. The crystallinity and composition were investigated by X-Ray, SEM and EPMA. The energy band gap of crystals were examined by thermoreflectance (TR) and transmission spectra measurement. The composition dependence of crystallinity, band gap, broadening parameter for Ge(Se1-xSx)2 were discussed. The values of energy band gap (Eg) for various alloy composition (x) can be fitted by an analytical expression 【Eg(x) =2.396＋0.140x＋0.616x2】。 Ching-Cheng Wu 吳慶成 2004 學位論文 ; thesis 90 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立東華大學 === 材料科學與工程學系 === 92 === In this study, Ge(Se1-xSx)2 crystals with x = 0、0.2、0.4、0.6、0.8、1 were grown by vertical Bridgman method. The crystallinity and composition were investigated by X-Ray, SEM and EPMA. The energy band gap of crystals were examined by thermoreflectance (TR) and transmission spectra measurement. The composition dependence of crystallinity, band gap, broadening parameter for Ge(Se1-xSx)2 were discussed. The values of energy band gap (Eg) for various alloy composition (x) can be fitted by an analytical expression 【Eg(x) =2.396＋0.140x＋0.616x2】。
author2 Ching-Cheng Wu
author_facet Ching-Cheng Wu
Chien-Yi Wu
吳建誼
author Chien-Yi Wu
吳建誼
spellingShingle Chien-Yi Wu
吳建誼
Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method
author_sort Chien-Yi Wu
title Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method
title_short Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method
title_full Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method
title_fullStr Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method
title_full_unstemmed Characterization of Ge(Se1-xSx)2 Alloy Grown By Vertical Bridgman Method
title_sort characterization of ge(se1-xsx)2 alloy grown by vertical bridgman method
publishDate 2004
url http://ndltd.ncl.edu.tw/handle/93896322221303900775
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