| Summary: | 碩士 === 國立東華大學 === 材料科學與工程學系 === 92 ===
Abstract
As compared with inorganic semiconducting materials, the
advantages of non-volatile organic bistable memory include simple
device structure, simple fabrication process, high integration ability on
flexible substrate, and low manufacturing cost in the future, since the
organic semiconductor materials have lower melting point and process
temperature. In this study, the effects of organic bistable memory device
with different layer thicknesses of organic film and various organic
materials are discussed. With an additional LiF layer in device is also
discussed in this work about the device stability of organic bistable
memory.
The device made by thermal evaporation method comprises of
stacking 5-layer organic and metallic films structure. The organic film of
AIDCN with a thickness of 30nm shows a good device performance on
the on-off ratio (~107). However, the threshold voltage of a device with
AIDCN is about 2.5V, which is larger than the threshold voltage of a
device with Alq3, ~1.3V. An additional LiF film incorporated into the
stacked device can increase the threshold and read voltage, and improve
on-off ratio and stability of a device.
The results in this study show the probable parameters, which could be
used to design the various types of non-volatile organic memories for the
future market. The materials of AIDCN and Alq3 can be applied to the
devices with high on-off ratio and low the threshold voltage respectively.
An additional LiF layer can be applied to the device with higher on-off
ratio and stability.
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