| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 92 === As the device size getting nanoscale, quantum dot structure had become one kind of new method of semiconductor manufacturing technology. In this thesis, two series of self-assembled InN quantum dots were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN thin film, based on sapphire(0001) substrate. GaN thin films were characterized by the reflection high energy electron diffraction (RHEED) and scanning electron microscope (SEM). Samples with smooth epitaxial GaN thin films were obtained. Then, InN quantum dots were grown on epitaxial GaN thin film. We have prepared two series of samples. According to the results of the high resolution X-ray diffractometer (HR-XRD) and RHEED patterns, InN structure can be successfully grown on the GaN thin film surface. First series contained samples with InN layer with different thickness and changes of surface morphology were found with increase of InN layer thickness. The second series contained samples with multiple InN layers of the same thickness. Results of atomic force microscopy (AFM), RHEED patterns and SEM, show that InN quantum dots were grown as Stranski-Krastanow growth mode.
|
|---|
