High-power angled broad-area semiconductor lasers

• Main Authors: Chih-Hung Tsai, 蔡志宏
• Other Authors: 蔡定平
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/96500476349884088643

碩士 === 國立臺灣大學 === 物理研究所 === 92 === High power and good beam quality are desired for semiconductor lasers in many applications such as spectroscopy, device and material characterization, laser and amplifier pumping, and nonlinear wavelength conversion. We propose a new type of broad area laser diodes that is capable of emitting good beam quality, high power and broadband tuning. The new type of laser diodes is fabricated with a broad-area waveguide that is oriented at an angle from the facet normal. This device does not require the DFB structure, so the fabrication is much simpler. The L-I curves, spectra, near-field patterns and far-field patterns of the angled broad-area waveguide laser diode are measured. The direction of the far field pattern along the facet normal for the device operated above the threshold current indicates that the light path is not along the waveguide direction. With external cavity by grating, the laser diode is tunable from 1275nm to 1310nm with output power up to 1 watt at 6Amp. The beam quality is good and the near field is avoid of filamentation.