Growth and Characteristics of InN Thin Film on Sapphire by RF Reactive Magnetron Sputtering

• Main Authors: Tao-Wei Chou, 周道煒
• Other Authors: Lung-Chien Chen
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/63674160554283635906

碩士 === 國立臺北科技大學 === 光電技術研究所 === 92 === Growth of polycrystalline Indium Nitride thin film on (00.1) Sapphire substrate by rf reactive magnetron sputtering was studied. By changing the deposition conditions such as substrate temperature, nitrogen flow rate and RF power, we found that at 500°C of substrate temperature, 12sccm of N2 flow rate and 50W of RF power, better quality InN thin film with orientation (00.2), Hall mobility 26.1cm2/V-s, carrier concentration 5.65×1020cm-3,and sheet resistance 5.641Ω/sq was obtained. Next we handled the InN samples with thermal treatment and found that properties of InN film were not improved after thermal treatment. At last we deposited InN on both n-GaN and p-GaN to find out the specific contact resistance by CTLM method. The better specific contact resistance of InN/n-GaN is 3.18×10-2Ω-cm2 after 1 minute RTA under 400°C, while after RTA 1 minute under 500°C, InN/p-GaN sample has better specific contact resistance 6.72Ω-cm2 .