Excimer laser induced lateral crystallization of ultra low temperature sputtered Si films
碩士 === 國立雲林科技大學 === 電機工程系碩士班 === 92 === We have shown that sputtered a-Si films crystallized by KrF excimer laser is a suitable material for fabrication of poly-Si TFTs on plastic substrate. The highest processing temperature that the substrate was subjected to was 120℃. Film grain size is found to...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/04708628351890301404 |