The Study and Implementation of Dual-Band (2.4 GHz, 5.2GHz) HBT Power Amplifier with Linearizer and Power-Detector Circuit by monolithic microwave integrated circuit (MMIC) technology
碩士 === 元智大學 === 通訊工程學系 === 92 === In this paper, we designed a power amplifier with Linearizer and power detector by monolithic microwave integrated circuit (MMIC) technology. The specifications of designed power amplifier are fulfilled the requirements of IEEE 802.11a, 11b, and 11g standard. The la...
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ndltd-TW-092YZU006500042016-06-15T04:17:26Z http://ndltd.ncl.edu.tw/handle/68120345413864348273 The Study and Implementation of Dual-Band (2.4 GHz, 5.2GHz) HBT Power Amplifier with Linearizer and Power-Detector Circuit by monolithic microwave integrated circuit (MMIC) technology 以MMIC製程研製含功率檢測器及線性器之雙頻(2.4GHz&5.2GHz)高線性功率放大器 Yi-Chen Chan 詹益鎮 碩士 元智大學 通訊工程學系 92 In this paper, we designed a power amplifier with Linearizer and power detector by monolithic microwave integrated circuit (MMIC) technology. The specifications of designed power amplifier are fulfilled the requirements of IEEE 802.11a, 11b, and 11g standard. The large signal model of GaAs HBT supplied by GCT is used to simulate and analyze the performance of designed PA circuit. We measured the power amplifier and power detector that manufactured by GCT foundry, and discussed the performance. The P-1dB of the power amplifier is 24.3dBm at 2.4GHz and 22.2dBm at 5.2GHz, gain is 21.3dB at 2.4GHz and 2.8dB at 5.2GHz. The voltage range of the power detector is 0.87~1.3V. The chip size of the circuit is 2×2 mm2. Jeng-Rern Yang 楊正任 2004 學位論文 ; thesis 0 zh-TW |
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碩士 === 元智大學 === 通訊工程學系 === 92 === In this paper, we designed a power amplifier with Linearizer and power detector by monolithic microwave integrated circuit (MMIC) technology. The specifications of designed power amplifier are fulfilled the requirements of IEEE 802.11a, 11b, and 11g standard. The large signal model of GaAs HBT supplied by GCT is used to simulate and analyze the performance of designed PA circuit. We measured the power amplifier and power detector that manufactured by GCT foundry, and discussed the performance. The P-1dB of the power amplifier is 24.3dBm at 2.4GHz and 22.2dBm at 5.2GHz, gain is 21.3dB at 2.4GHz and 2.8dB at 5.2GHz. The voltage range of the power detector is 0.87~1.3V. The chip size of the circuit is 2×2 mm2.
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Jeng-Rern Yang |
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Jeng-Rern Yang Yi-Chen Chan 詹益鎮 |
author |
Yi-Chen Chan 詹益鎮 |
spellingShingle |
Yi-Chen Chan 詹益鎮 The Study and Implementation of Dual-Band (2.4 GHz, 5.2GHz) HBT Power Amplifier with Linearizer and Power-Detector Circuit by monolithic microwave integrated circuit (MMIC) technology |
author_sort |
Yi-Chen Chan |
title |
The Study and Implementation of Dual-Band (2.4 GHz, 5.2GHz) HBT Power Amplifier with Linearizer and Power-Detector Circuit by monolithic microwave integrated circuit (MMIC) technology |
title_short |
The Study and Implementation of Dual-Band (2.4 GHz, 5.2GHz) HBT Power Amplifier with Linearizer and Power-Detector Circuit by monolithic microwave integrated circuit (MMIC) technology |
title_full |
The Study and Implementation of Dual-Band (2.4 GHz, 5.2GHz) HBT Power Amplifier with Linearizer and Power-Detector Circuit by monolithic microwave integrated circuit (MMIC) technology |
title_fullStr |
The Study and Implementation of Dual-Band (2.4 GHz, 5.2GHz) HBT Power Amplifier with Linearizer and Power-Detector Circuit by monolithic microwave integrated circuit (MMIC) technology |
title_full_unstemmed |
The Study and Implementation of Dual-Band (2.4 GHz, 5.2GHz) HBT Power Amplifier with Linearizer and Power-Detector Circuit by monolithic microwave integrated circuit (MMIC) technology |
title_sort |
study and implementation of dual-band (2.4 ghz, 5.2ghz) hbt power amplifier with linearizer and power-detector circuit by monolithic microwave integrated circuit (mmic) technology |
publishDate |
2004 |
url |
http://ndltd.ncl.edu.tw/handle/68120345413864348273 |
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