| Summary: | 碩士 === 國防大學中正理工學院 === 電子工程研究所 === 93 === In the thesis, we mainly focus on experimental, fabrication and device characteristic analyses of 850nm AlGaAs/GaAs based quantum well vertical cavity surface emitting lasers (VCSEL) treated by high temperature wetting oxide method .
In the experimental design, the distributed Bragg reflectors is simulated by the Macleod simulator, and also it is successfully explained that the transmission matrix method (TMM) and matrix calculating method (MCM) by MathCAD with theories can be well proposed to match the results from the thin film simulator. We also re-establish the three-stage temperature controlled furnace for high temperature wet oxide process. In the systematical experiments, we attempt to reduce differential resistance by using different metals and thickness for good ohmic contact. The VCSEL device processes, such as photo-resistance coating, hard baking, photography, developed etching and metal evaporating, etc. are overall discussed in the sections of the thesis.
Eventually, the optimized ohmic contact and oxidation processing with 70 minutes of oxidation time has been proposed under environment temperature 30℃, the VCSEL has a series optoelectronic characteristic as fallows: the threshold current is 16.9mA and the threshold voltage is 1.90V. The highest total output power 4.1mW can be obtained by injected current of 66mA. The average characteristic temperature T0 is 265.5℃, ground-state wavelength 858.9nm and differential resistance 25.8Ω, respectively.
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