Study of thiol molecules deposited on Si（111）－5×2/Au surface

• Main Authors: Hui Ching, 王慧晴
• Other Authors: none
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/77296841115552328818

碩士 === 國立中正大學 === 物理所 === 93 === By depositing D.T.T（C4H6（OH）2（SH）2）and C12H26S molecules onto a Si(111)-5×2/Au surface in air or under vacuum, we have observed the growth of thiol molecules on the surface.We summarize our findings as follows： 1. We find that the surface structure with thiol molecules being deposited in vacuum is better than that deposited in air. The dust/small particles in the air clearly degrade the quality of the grown film. 2. By heating the surface the thiol molecules acquire thermal energy to allow faster diffusion at the surface, which leads to a better ordered structure. 3. The bond between the Au atom at the surface and the sulfur atom in a thiol molecue breaks as the surface is heated above 700°C. 4. We have found that, by depositing thiol molecules onto the surface, the growth of C12H26S molecules stops at one layer whereas a multi-layer structure forms for the D.T.T. molecules.