A Dual Band CMOS RF Front-end Design For ISM Band Applications

碩士 === 長庚大學 === 電子工程研究所 === 93 === This thesis presents a design for dual-band RF front-end circuits in ISM bands. The front-end circuits are designed to be used in a heterodyne architecture. These circuits are simulated by Agilent Eesoft EDA-ADS software and implemented in TSMC 0.18μm CMOS techniqu...

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Bibliographic Details
Main Authors: Kao-Yu Lin, 林高宇
Other Authors: Wu-Shiung Feng
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/60560989082302149067
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Summary:碩士 === 長庚大學 === 電子工程研究所 === 93 === This thesis presents a design for dual-band RF front-end circuits in ISM bands. The front-end circuits are designed to be used in a heterodyne architecture. These circuits are simulated by Agilent Eesoft EDA-ADS software and implemented in TSMC 0.18μm CMOS technique. The receiver includes a dual band low noise amplifier and a mixer in this thesis. The front-end circuits are programmed under the RF frequencies to be 2.4 GHz and 900 MHz and through the local frequency oscillators of 2GHz and 500 MHz. So the IF is 400MHz. The LNA in 2.4GHz mode has gain of 18.745 dB, NF (Noise Figure) of 3.22 dB, input third order intercept point (IIP3) of -7.6 dBm. The LNA in 900 MHz mode has gain 15.211 dB, NF of 3.64 dB, IIP3 of -3.7 dBm, and power consumption of 16.2 mW . The mixer is designed as current-bleeding one with NF of 8.069 dB, conversion gain of 7.293 dB, IIP3 of -8 dBm in 900MHz mode. The mixer which is in 2.4GHz mode with NF of 3.22 dB, conversion gain of 8.554 dB, IIP3 of -6 dBm, and power consumption of 10.638 mW.