Investigation of High Quality Microwave Passive Components based on GaN substrate

• Main Authors: M.H. Chaing, 江明晃
• Other Authors: P.H. Chang
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/28431582024533480163

碩士 === 長庚大學 === 電子工程研究所 === 93 === Summary 21st century is a period of information explosion. With fast development of wireless communication, offer lots of facility for human life. On the other way, the demands for radio frequency application are urgent day by day even more with the request for communication quality. Therefore microwave semiconductor component and circuit are playing an indispensable role. In the wireless communication system, signals were received by antenna and delivered into low noise amplifier, filter, mixer, intermediate frequency amplifier to signal processor and change information into what we want, so the quality of data communication will be effect directly. And the passive component plays an extremely important role in the communication system, which account 95% included of the package of the mobile-phone. On the other hand, hybrid microwave integrated circuit and design must match to impedance network, bias voltage and RF choke, DC blocking, all these need to be rely on passive components such as inductor, capacitor and resistance component to build construction. This experiment grows up and compares currently used in electron component, the sapphire base, with present commercial used the silicon base onto millimeter frequency and quantity examine character to S parameter by setting up models. A series of filters design on 5.4GHz frequency band, regards doing as reference for future material application