| Summary: | 碩士 === 建國科技大學 === 機電光系統研究所 === 93 === Tin-doped indium oxide films are highly degenerate wide gap semiconductors, many industry products take the transparent conductivity thin film by ITO, including solar cell, liquid crystal display, OLED etc. The plastic is used in the photo electricity industry as flexible substrate, when deposits ITO on plastic substrate, the thin film crystallization are very bad because of material is restricted in the low temperature. This research using the ZnO thin film crystallization preferred orientation combine with the ion beam assistance technology to deposit the high quality ITO thin film.
The first stage mainly deposited the ZnO on PES substrate as a barrier layer. The preferred orientation (002) of ZnO is helpful to the ITO thin film crystal grain size growth. The second stage deposited ITO on ZnO substrate. The high transparent and high conductively thin film was control by ion source energy and oxygen flow in low temperature. In order to make a relation between process parameter and photo-electrical performance, X-Ray was used to exanimate film structure. The electrical properties were measured using a four-point probe and Hall effect. An UV spectrophotometer was applied to measure the optical transmittance of the films in atmosphere.
The research showed that the lowest resistivity of 6.55×10-4 ohm-cm was obtained for ITO films deposited on the ZnO/PES substrate.
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