| Summary: | 碩士 === 清雲科技大學 === 電子工程研究所 === 93 === This paper proposes a high-performance IR to overcome the influence of
communication speed. The DBR is consisted of high and low refractive index materials,
which contain thickness of 1/4 wavelength, respectively. The LED automation rate will reach
<50MHz. The RCLED is easy of fabrication, high yield rate and safety. In this project, the
automation rate will reach 50~500 MHz. In RCLED, due to the resonance, the output light is
small beam divergence angle, light high-grade <10nm and light wavelength 600~1500nm,
higher power and emitting directionality. In LED, the output light is large beam divergence
angle, light low-grade 30~50nm and light wavelength 30~50nm. The improved performance
relative to conventional GaAs QW structure grown in the same reactor was attributed to the
increased gain and reduction in transparency current associated with strained QWs. The
pattern in the photoresist is formed by exposing the devices covered with a photomask to the
high density ultraviolet light for 20 seconds, followed by rinsing the sample in a developing
solution for 40 seconds. After mesa photography, the devices were put into a Teflon beaker
for wet etching. The metal contacts were deposited using thermal evaporator. This procedure
made the contact between the semiconductor and metal to an ohmic contact. Main asset, it is
very small of scatter angle and the very fast of communication speed. The High-Performance
IR is proposed in this paper to demonstrate the effectiveness of L-I-V and PL approach .
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