| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === Abstract
In this study, the Antimony (Sb) -doped zinc oxide films were prepared by diffusing Antimony into ZnO films. Sb -doped zinc oxide film ware found to possess superior conductivity and transmittance at ultraviolet wavelength. We investigated the optical and electrical performances of these films which are treated by various annealing times and temperatures. The results showed that Sb-doped ZnO films could effectively increase carrier concentration and decrease resistivity of the films. The optical absorption edge of ZnO films shifted toward a short wavelength with Sb doped in the ZnO films. The electrical properties of Sb-doped ZnO film annealed at 900℃ in N2 ambience for 1 minute shows that the lowest resistivity was 5.1×10-4 Ω-cm. As Sb in ZnO films increases from 3wt% to 6wt%, carrier concentrations (ne) also increases and reach a maximum value of 1.16x1020cm-3 for 6wt% Sb-doped film. The transmittance in the visible range was above 90%. The edge of absorption is 364.1nm after doping 6wt% Sb into ZnO film, because of Burstein-Moss effect, it is calculated that the Eg of ZnO films change from 3.31eV to 3.406eV. Doping Sb into ZnO leads to the increase of work function from 5.3eV to 5.6eV. The lattice constant c shifts from 5.185Å to 5.198Å, also the lattice constant a shifts 3.175Å to 3.183 Å. This shift is because of the ionic radius of Zn and Sb is 0.72 Å and 0.76 Å, respectively.
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