| Summary: | 碩士 === 國立成功大學 === 電腦與通信工程研究所 === 93 === Abstract
This thesis presents the research on RF transceiver CMOS chips for UWB (Ultra Wide-Band). Research CMOS broadband LNA at first in the thesis, and then combine broadband LNA, broadband driver amplifier, and T/R switch in single chip of UWB CMOS RF transceiver. The RFICs are fabricated by a TSMC standard 0.18μm CMOS process. The circuit measurement is performed using a FR-4 PCB test fixture.
I utilize the principle of feedback, to design three non-cascode broadband LNA. About the 3-6GHz CMOS UWB LAN, the measured gain is 14~15.8dB, noise figure is 4.5~6dB, input return loss is better than 12dB, output return loss is better than 10dB, and input P1dB is -15dBm, IIP3 is -5dBm, isolation better than 21dB. About the 1V 6mA 3-6GHz CMOS UWB LAN, in the UWB low band (3.1 to 5.15GHz) under 1.8V/1.0V supply voltage, the broadband LNA exhibit a gain of 16.2~17.4dB/ 11.7~13.7dB, noise figure is 3.8dB~4.3dB/4.3~4.9dB, input return loss better than 9.8dB/13.2dB, output return loss better than 11dB/10.6dB, isolation better than 34dB/35dB, IIP3 of -9.2dBm/-10.8dBm and input P1dB of -19dBm/-21dBm, respectively. About the 2.4-6GHz COMS UWB differential LNA, in the UWB low-band, the broadband LNA exhibit a gain of 17.6~18.3dB, noise figure of 3.4dB~5.2dB, input return loss better than 10 dB, output return loss better than 11 dB, isolation better than 30dB, IIP3 of -7.3dBm and input P1dB of -17 dBm, respectively.
About the 3-6GHz CMOS RF front-end of UWB transceiver, in the UWB low band under 1.8V/1.0V supply voltage, the transmit circuits (driver amp. + T/R switch) exhibit a gain of 16.3~18dB/14.3~16.4dB, noise figure is 3.5dB~4.6dB/3.7~4.8dB, input return loss better than 9.3dB/9.7dB, output return loss better than 10.3dB/ 10.5dB, OIP3 of 6.3dBm/5.6dBm and output P1dB of -2.2dBm/-4.2dBm, respectively. the receive circuits (T/R switch + LNA) exhibit a gain of 13.5~16.6dB/10.6~14dB, noise figure is 5.1dB~6.4dB/5.2~6.6dB, input return loss better than 10dB/10.9dB, output return loss better than 9.6dB/10dB, IIP3 of -10.1dBm/-10.9dBm and input P1dB of -21dBm/-21dBm, respectively.
Besides, I design a 5-11GHz CMOS UWB LNA and a 3-11GHz SiGe UWB LNA. The measured results are in the appendix A and appendix B.
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