The Fabrication and Characterization of PECVD-grown Si-rich SiOx based Metal-Oxide-Semiconducor Light Emitting Diode

• Main Authors: Chi-Kuan Lin, 林齊冠
• Other Authors: Gong-Ru Lin
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/94083640317391706139

碩士 === 國立交通大學 === 光電工程系所 === 93 === The difference between white and near-infrared electroluminescences (EL) of the metal-oxide-semiconductor diodes fabricated on 1100oC-annealed Si-rich SiOx/p-Si substrate with buried pyramid Si quantum dots (Si-QDs) are characterized. By changing the substrate temperature and induced coupled plasma (ICP) power during the plasma enhanced chemical vapor deposition (PECVD) of Si-rich SiOx films, the effects of growth condition on the defect-related and Si-QD related carrier transport and EL spectroscopy are also investigated. By decreasing the ICP power to a threshold of 30 W, the (100)-oriented triangular Si-QDs significantly grows up the along Si/SiOx interface. From the power-dependent and temperature-dependent micro-PL spectra, it is concluded that the luminescent components at 700-850 nm is mainly contributed by the recombination in Si-QDs and self-trapped exciton (STE). After comparing the EL spectra of MOS diodes made on as-grown and annealed Si-rich SiOx, the Si-QD-related EL spectra at 650-850 nm is confirmed, whereas the EL spectra at shorter wavelengths (400-650 nm) is attributed to the radiative defects such as the weak-oxygen bond (415 nm), the neutral oxygen vacancy (NOV) defects (455 nm), and the E'delta defect (520 nm). These defects become an electron-preferred transporting path within the Si-rich SiOx film, whose densities are decreased with increasing substrate temperature or reducing ICP power. A nearly defect-free Si-rich SiOx sample can be grown under such condition, which contributes to a most stable near-infrared EL with longest lifetime although the power of purely Si-QD related EL at near-Infrared wavelengths is slightly lower (16 nW).