Thermal Stability and Properties of Ti-Al-N Diffusion Barrier Layer for Copper Interconnections
碩士 === 國立交通大學 === 工學院碩士在職專班精密與自動化工程學程 === 93 === This article presents the deposition of Ti-Al by reactive RF-magnetron sputtering on silicon substrate in various nitrogen flow rate, and carries out a ternary barrier film, Ti-Al-N, with different characteristics. Copper films are subsequently deposi...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/16367699699355453695 |