| Summary: | 碩士 === 國立交通大學 === 物理研究所 === 93 === Recently organic semiconductor/conductor is not only an important but also there are more and more commercial products, for example: small organic display. Due to the basic characteristics differences of organic device, there are more and more organic device in the research and develop, for examples: organic memory, organic transistor and LEDs, and this is what we call the “organic electronics”. Most organic devices operation principles are base on the inorganic semiconductor device theory. For organic transistor, as the same as the inorganic electronics, most devices structure were the structure of field emitting transistor. Because the organic material low mobility, there are some intrinsic problems of organic transistor. For example, low operation speed and small output current. If the organic transistors want have the same performance as inorganic transistors will increase lots of cost. So that, we hope to made a low cost, easy process and the performance will achieve the level of the require of commercial product. According to our requirement, we found the metal base structure in the inorganic electronics. And there is no this types all organic transistors in the world. The organic metal base transistor what we made have nice performance, which the current gain up to 29, maximum output current 25uA at the operation voltage just 5 volts. Future work’s goal is the transistors operation performance good enough be the commercial product.
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