Numerical analysis of the retention behavior in nitride storage flash memory
碩士 === 國立交通大學 === 電子工程系所 === 93 === The bottom oxide thickness induced the charge loss blocking effect for a SONOS type flash memory is investigated. Utilizing a numerical analysis based on a multiple trapping model for solving the Shockley-Read-Hall (SRH) rate equations, the more accurate expressio...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86474805502454286236 |