A Niche Foundry Model Study for LED Middle Stream Post Process -The Case Study for GaN Sapphire Wafer
碩士 === 國立交通大學 === 管理學院碩士在職專班管理科學組 === 93 === In the past three years, the price of high-brightness LEDs has declined tremendously, and LED characteristics, such as luminous intensity and lifetime, have improved significantly. As a result, LED use has expanded rapidly in applications such as automoti...
Main Authors: | Li-Chao Lu, 呂理召 |
---|---|
Other Authors: | Fu-Song Lin |
Format: | Others |
Language: | zh-TW |
Published: |
2005
|
Online Access: | http://ndltd.ncl.edu.tw/handle/66229371745337477506 |
Similar Items
-
Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate
by: Wang Bin, et al.
Published: (2013-01-01) -
Optical Characterization of GaN Epitaxial Layer and LED Structure Grown on Patterned Sapphire Substrate
by: Jeff Yang, et al.
Published: (2005) -
Growth of GaN-based LED on Patterned Sapphire Substrate
by: Liao, Wei-Chih, et al.
Published: (2009) -
Study of the Nature Pattern Sapphire Substrate by Wet Etching and Apply for GaN LED
by: Yi-Ju Chen, et al.
Published: (2007) -
Study of GaN-based LEDs grown on sapphire substrate with selectively diffused patterns
by: Kuo,Chung-Hao, et al.
Published: (101)