| Summary: | 碩士 === 國立交通大學 === 電機與控制工程系所 === 93 === This thesis presents a multi-band voltage-controlled
ring oscillator via the multiple-pass connection,
resulting in a wide range of oscillation
frequency. Most multiple-pass ring oscillators
are designed to increase the oscillation frequency. In
this thesis, we also
exploit the concept of multiple-pass to design a
multiple-pass ring oscillator which can decrease the
oscillation frequency.
A connection is designed via the NMOS
switch to combine together the two circuits all via the
concept of multiple-pass such that a wider range of
oscillation frequency can be obtained.
Hence, we obtain a voltage-controlled oscillator with
two frequency bands which can be easily controlled by
the on/off of the NMOS switches.
We design a nine-stage ring
oscillator; each stage consists of twelve MOS
transistors including eight NMOS transistors and four PMOS
transistors. This oscillator is simulated using 0.18
$\mu m,$ 1P6M CMOS technology provided by
Taiwan Semi-Conductor Manufacturing Company.
The post simulation of the design oscillator, under
the supply voltage of 1.8 V, shows that the required
power is 91.4 mw, the phase noise is -115.8 dBc/Hz at a 1-MHz offset from a 2-GHz center frequency,
the frequency tuning range is from 0.32GHz to 1.8GHz, and
the minimum peak-to-peak output swing is 1.67V.
|
|---|
