Growth and fabrication of InGaAsN laser diode.
碩士 === 國立中央大學 === 電機工程研究所 === 93 === The effects of two-step and nitride passivation growth of InGaAsN QW on AlGaAs/GaAs cladding layers have been studied. It is shown that both methods are effective on reducing Al-contamination and improving optical quality of InGaAsN QW. While lasers prepared by b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40610977459777969270 |