Electrical Properties of Bi3.15Nd0.85Ti3O12 Thin Films Prepared on Different Substrates with a Modified Chemical Route

• Main Authors: Min-Chih Chang, 張敏芝
• Other Authors: Dong-Hau Kuo
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/29901717165827445731

碩士 === 國立東華大學 === 材料科學與工程學系 === 93 === Bi3.15Nd0.85Ti3O12 (BNT) thin films were prepared by a modified chemical route to understand the effects of the substrates with different adhesion layer, the addition of the H2O2 oxidant, and the annealing atmospheres of either air or oxygen, on ferroelectric performance. The condition for BNT thin films with the best ferroelectric properties occurred for BNTs on the TiO2-adhesion substrates undergoing crystallization at 680oC for 15 min in air. They displayed high remaining polarization of 17.9 µC/cm2, coercive field of 109 kV/cm, and fatigue resistance up to 109 switching cycles with a slight 1% decrease. BNT thin films on the Ti-adhesion substrates had improved electrical properties only after the annealing conducted in air. The addition of H2O2 oxidant for the Ti-adhesion BNT films enhanced the remanent polarization but not for the improvement of ferroelectric fatigue. The ferroelectric performance was not obtained as good as those published in the frontier literatures. Further research to find the right solution for good ferroelectric properties is encouraged.