Effects of Annealing Process on AZO Transparent Conductive Oxide Film

• Main Authors: Xin-En Chen, 陳馨恩
• Other Authors: Wen-Tung Chien
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/41785583565286333088

碩士 === 國立屏東科技大學 === 機械工程系 === 93 === The purpose of this study is to deposite AZO transparent conductive film on corning glass substrate using radio frequency magnetron sputtering, then treats AZO thin film in laser annealing. Meanwhile, the effects of process parameters on resistivity are investigated. The construct of this study can be divided into three parts: Firstly, one-factor-at-a-time method is used to arrange the sputtering parameters for experimental work. The selected sputtering parameters include Al RF power, DC bias and working gas. Sputtering experiments are performed using the RF magnetron sputtering system, while the measurements of resistivity are conducted and compared. Consequently, the optimum setting of sputtering parameters for resistivity can be found. Secondly, an orthogonal array of Taguchi method is used to arrange the laser annealing parameters for experimental work. The selected laser annealing parameters include peak power, focused position, working speed and number of pulse. Annealing process is carried out using a pulsed Nd:YAG laser machine. An improvement of decreasing resistivity has been found which corresponding to a setting of optimum laser annealing parameters. Thirdly, the measurements of deposited rate, microstructure and Optical transmission are performed, then the relationship between their characteristics with the resistivity of AZO film is developed. In this study, the results indicate that the minimum resistivity for sputtering process is 6.087×10-3 Ω-cm. It can be reduced to a less value of 4.119×10-3 Ω-cm after conducting the optimal parameters for annealing treatment that improving 32.3% in resistivity. In addition, it shows that the Al RF power and peak power are the most significant sputtering parameters affecting resistivity of AZO film. If the Al RF power increases, then deposited rate increases. Consequently, the thin film attains more detailed grown surface, smaller crystalline size and increasing diffraction intensity that makes resistivity reduce. However, an increase in DC bias and the introduce of hydrogen causes a decrease in deposited rate that leads an over detailed grown surface and a decrease in diffraction intensity. As a result, the resistivity is unable be improved anymore. When the laser annealing process performed, it gives peak power increasing, makes better crystallizing of thin film such that lower resistivity can be obtained. On the other hand, the optical transmission reaches above 85% in spite of the change in settings of parameters for AZO thin film. It indicates that the composition of thin film makes no effect on optical characteristic.