p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application
碩士 === 國立中山大學 === 材料科學研究所 === 93 === Polycrystalline p-Cu2O were fabricated by reactive rf magnetron sputtering . we found that The electrical, optical, and crystallographical properties of films were strongly dependent on the deposition condition . Grant size increasing in the range from 10 to 45nm...
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ndltd-TW-093NSYS51590112015-12-23T04:08:13Z http://ndltd.ncl.edu.tw/handle/04066880276575160735 p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application 以反應式磁控濺鍍法製備氧化亞銅薄膜以及其特性之分析、應用 Shun-jie Yang 楊舜傑 碩士 國立中山大學 材料科學研究所 93 Polycrystalline p-Cu2O were fabricated by reactive rf magnetron sputtering . we found that The electrical, optical, and crystallographical properties of films were strongly dependent on the deposition condition . Grant size increasing in the range from 10 to 45nm , A hole concentration increasing in the range from 1016 to 1017 cm-3 and a mobility increasing on the order of 10-1 cm2/V s were obtained in the cuprous oxide thin film prepared by controlling work pressure (Argon partial partial pressure ) . Fabricated thin-film heterojunction diodes consisting of a p-type cuprous oxide combined with and n-type Al-doped ZnO and ITO exhibited a rectifying current-voltage characteristic . Bae-Heng Tseng 曾百亨 2005 學位論文 ; thesis 59 zh-TW |
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碩士 === 國立中山大學 === 材料科學研究所 === 93 === Polycrystalline p-Cu2O were fabricated by reactive rf magnetron sputtering . we found that The electrical, optical, and crystallographical properties of films were strongly dependent on the deposition condition . Grant size increasing in the range from 10 to 45nm , A hole concentration increasing in the range from 1016 to 1017 cm-3 and a mobility increasing on the order of 10-1 cm2/V s were obtained in the cuprous oxide thin film prepared by controlling work pressure (Argon partial partial pressure ) .
Fabricated thin-film heterojunction diodes consisting of a p-type cuprous oxide combined with and n-type Al-doped ZnO and ITO exhibited a rectifying current-voltage characteristic .
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author2 |
Bae-Heng Tseng |
author_facet |
Bae-Heng Tseng Shun-jie Yang 楊舜傑 |
author |
Shun-jie Yang 楊舜傑 |
spellingShingle |
Shun-jie Yang 楊舜傑 p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application |
author_sort |
Shun-jie Yang |
title |
p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application |
title_short |
p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application |
title_full |
p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application |
title_fullStr |
p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application |
title_full_unstemmed |
p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application |
title_sort |
p-type semiconducting cu2o thin films prepared by reactive magnetron sputtering and a study of its properties and application |
publishDate |
2005 |
url |
http://ndltd.ncl.edu.tw/handle/04066880276575160735 |
work_keys_str_mv |
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