p-type semiconducting Cu2O thin films prepared by reactive magnetron sputtering and a study of its properties and application

• Main Authors: Shun-jie Yang, 楊舜傑
• Other Authors: Bae-Heng Tseng
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/04066880276575160735

碩士 === 國立中山大學 === 材料科學研究所 === 93 === Polycrystalline p-Cu2O were fabricated by reactive rf magnetron sputtering . we found that The electrical, optical, and crystallographical properties of films were strongly dependent on the deposition condition . Grant size increasing in the range from 10 to 45nm , A hole concentration increasing in the range from 1016 to 1017 cm-3 and a mobility increasing on the order of 10-1 cm2/V s were obtained in the cuprous oxide thin film prepared by controlling work pressure (Argon partial partial pressure ) . Fabricated thin-film heterojunction diodes consisting of a p-type cuprous oxide combined with and n-type Al-doped ZnO and ITO exhibited a rectifying current-voltage characteristic .