| Summary: | 碩士 === 國立清華大學 === 材料科學工程學系 === 93 === The phase change momery device is one of the potential storage devices. The operation principle is to utilize the different resistance of crystal and amorphous chalcogenide to store data. Generally speaking, it has many advantages such as nonvolatile、high-speed programming (smaller than 100ns ) 、high endurance (greater than 1013 times )、 low power consumption ,etc.
In this study ,we investigate the effect of doped nitrogen in Ge2Sb2Te5 thin film on microstructures and properties. The memory
layer is deposited by reactive RF sputtering,for nitrogen doping . In addition, the doped momery layer process higher it’s resistivity , The rewrite times of device with nitrogen doping are better than undopped. We wish this study can give suggestions on the development of memory layer materials.
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