SPICE MODEL OF CMOS IMAGE SENSOR PHOTODIODE

碩士 === 國立清華大學 === 電子工程研究所 === 93 === A novel photodiode model which better describes the electro-optical behavior of the CMOS image sensor has been developed. The conventional diode model adopted by Bsim 3.3 suffers from the violation between simulation and measurement results. The sources of the vi...

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Main Author: 陳虹竹
Other Authors: Ya-Chin King
Format: Others
Language:en_US
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/90553381467195603824
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spelling ndltd-TW-093NTHU54280562015-10-13T11:15:49Z http://ndltd.ncl.edu.tw/handle/90553381467195603824 SPICE MODEL OF CMOS IMAGE SENSOR PHOTODIODE 互補式影像感測器光二極體的SPICE模型 陳虹竹 碩士 國立清華大學 電子工程研究所 93 A novel photodiode model which better describes the electro-optical behavior of the CMOS image sensor has been developed. The conventional diode model adopted by Bsim 3.3 suffers from the violation between simulation and measurement results. The sources of the violation are analyzed into details. A novel mathematical model is proposed. By using TSMC 0.35μm CMOS technology, photodiodes with different structures have been fabricated and measured. The results can show the relationship between the diode current and the operation voltage, temperature, photo lux and wavelength, respectively. And the results can be used to extract the relevant parameters. Moreover, the proposed mathematical model and the extracted parameters can provide a precise environment for the diode current simulation. Ya-Chin King 金雅琴 2005 學位論文 ; thesis 60 en_US
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language en_US
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sources NDLTD
description 碩士 === 國立清華大學 === 電子工程研究所 === 93 === A novel photodiode model which better describes the electro-optical behavior of the CMOS image sensor has been developed. The conventional diode model adopted by Bsim 3.3 suffers from the violation between simulation and measurement results. The sources of the violation are analyzed into details. A novel mathematical model is proposed. By using TSMC 0.35μm CMOS technology, photodiodes with different structures have been fabricated and measured. The results can show the relationship between the diode current and the operation voltage, temperature, photo lux and wavelength, respectively. And the results can be used to extract the relevant parameters. Moreover, the proposed mathematical model and the extracted parameters can provide a precise environment for the diode current simulation.
author2 Ya-Chin King
author_facet Ya-Chin King
陳虹竹
author 陳虹竹
spellingShingle 陳虹竹
SPICE MODEL OF CMOS IMAGE SENSOR PHOTODIODE
author_sort 陳虹竹
title SPICE MODEL OF CMOS IMAGE SENSOR PHOTODIODE
title_short SPICE MODEL OF CMOS IMAGE SENSOR PHOTODIODE
title_full SPICE MODEL OF CMOS IMAGE SENSOR PHOTODIODE
title_fullStr SPICE MODEL OF CMOS IMAGE SENSOR PHOTODIODE
title_full_unstemmed SPICE MODEL OF CMOS IMAGE SENSOR PHOTODIODE
title_sort spice model of cmos image sensor photodiode
publishDate 2005
url http://ndltd.ncl.edu.tw/handle/90553381467195603824
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