The study of the structure and optical properties in quantum well and nanobelts of III-V semiconductor by using HR&EFTEM
博士 === 國立清華大學 === 工程與系統科學系 === 93 === Recently, the III-V group semiconductors play a very important material in light emitting. These materials have great market potentials in the future. In this thesis, we study the microstructure of GaN/InGaN multiple-quantum-wells (MQWs)、GaN/AlN quantum well and...
Main Authors: | Jin-Sheng Tsai, 蔡錦盛 |
---|---|
Other Authors: | Ji-Jung Kai |
Format: | Others |
Language: | zh-TW |
Published: |
2005
|
Online Access: | http://ndltd.ncl.edu.tw/handle/33817342017544509087 |
Similar Items
-
Theory of the optical properties of III-V semiconductor quantum wells
by: Meney, Alistair Thomas
Published: (1992) -
Inter-band optical spectroscopy of III-V semiconductor quantum wells
by: Rodgers, D. C.
Published: (1986) -
Optical time resolved spin dynamics in III V semiconductor quantum wells
by: Brand, Matthew Anthony
Published: (2003) -
Photoluminescence in bulk III-V semiconductors and quantum wells
by: Chidley, E. T. R.
Published: (1991) -
The electronic configuration and structure analysis in nanomaterial with high resolution EFTEM
by: JingYi Yan, et al.
Published: (2004)