MgB2超導薄膜研製與微橋製作
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 93 === ABSTRACT In order to fabricate a nano-bridge from MgB2 film, a MgB2 film was produced through RF sputtering and ex-situ annealing process, the film of MgB2 was grown on the Al2O3（1 02） substrate. The best film we obtained had superconducting transition temperat...
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| Format: | Others |
| Language: | zh-TW |
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2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53925354701165175277 |
| Summary: | 碩士 === 國立臺灣師範大學 === 光電科技研究所 === 93 === ABSTRACT
In order to fabricate a nano-bridge from MgB2 film, a MgB2 film was produced through RF sputtering and ex-situ annealing process, the film of MgB2 was grown on the Al2O3（1 02） substrate. The best film we obtained had superconducting transition temperature of 24 K with transition width ΔT ≒ 2 K. The root mean square roughness of the surface was found to be 8 nm. The average size of the crystalline grain was about 500 nm, yet no hexagonal shape could be observed. The identification of MgB2 phase in the film was confirmed by XRD measurement and boron K-edge X-ray absorption near-edge spectrum.
Comparison of our film with the one that fabricated by using hybrid physical-chemical vapor deposition (HPCVD) method (Tc = 41 K and ΔT ≒ 0.2 K) was made for the change of Tc , ΔT and Jc after e-beam lithography. All of these quantities were observed to be worse for our film than the HPCVD film, possibly due to the impurity and less homogeneity of the film we produced.
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