| Summary: | 碩士 === 國立臺灣大學 === 光電工程學研究所 === 93 === Due to the intrinsic built-in piezoelectric effect, the conventional calculation of
InAs quantum dot without considering the piezoelectricity is not suitable. Referring
to the study proposed by A. D. Andreev et al. in 2000, we perform the optical
property calculation about the GaN quantum dots.
First, we obtain the characteristic function of the QD shape, then applied it to
obtain the strain distribution according to the classical elasticity. Second from
obtained strain tensors, we can derived the piezoelectric potential and substitute it
into strain-moment interaction element in the k·p matrix. Then solve the
eigen-value problem to obtain the eigen energy and eigen vector which will be
utilized in the calculation of the optical transition. The parameters such as
eigen-energy and electron wave function are very important in the design of the
GaN quantum dot device especially in the quantum dot laser, quantum memory and
quantum computation.
Finally we will compare the calculated eigen-energy, wave-function, and the
optical properties with theoretical calculation or the experiment data from other
researchers. Moreover, we will discuss how dose the existence of the piezoelectric
field affect the quantum confined stark effect of the zinc-blende and wurtzite
quantum dot.
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