| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 93 === The purpose of this thesis is to present a power amplifier which can be used in WLAN 802.11a system. Two major parts are included, the first part is power amplifier chip implemented by CMOS process while the other part is the output matching network. The amplifier chip is implemented by TSMC 0.18um CMOS process, and the output matching network is implemented by low temperature co-fired ceramic (LTCC) process.
We adopt differential self-biased topology in the power amplifier to overcome the problems of hot carrier effect and break down effect when the power amplifier is operating in 23.2dBm output power. Accordingly, the differential self-biased topology can improved the reliability of power amplifier significantly. Moreover, the output matching network which implemented by LTCC, with inherently high Q factor, can improved the efficiency of the total power amplifier. The replacement of PCB board discrete passive components with LTCC will allow the realization the concept of SOP (System on Package) in the near future. Furthermore, the implementation of power amplifier with TSMC 0.18μm CMOS process and with DC voltage of 1.8V makes it possible to integrate the IF and base-band circuits in a single chip.
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