Study on InAs/InGaAs/GaAs Quantum dot lasers
碩士 === 國立臺灣大學 === 電子工程學研究所 === 93 === In this thesis, we report our studies on the effects of quantum-dot (QD) stack number, coupled QD structure, and the lattice mismatch of InGaP cladding layers on the performances of QD lasers. In the portion of QD stack number, it is found that though the lasers...
Main Authors: | Chi-Sen Lee, 李騏亘 |
---|---|
Other Authors: | Hao-Hsiung Lin |
Format: | Others |
Language: | en_US |
Published: |
2005
|
Online Access: | http://ndltd.ncl.edu.tw/handle/28653322494574261219 |
Similar Items
-
Studies of InGaAs/GaAs(111) and InAs/GaAs(100) quantum dot by photoluminescence
by: Yun-Ging Lin, et al.
Published: (2005) -
InAs/InGaAs quantum dot laser diode
by: LI CHUN TE, et al.
Published: (2003) -
Optical properties of InAs/GaAs quantum dots with InGaAs overgrown layer
by: Chang-Kang Wang, et al.
Published: (2005) -
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
by: Sergii Golovynskyi, et al.
Published: (2017-05-01) -
InAs/GaAs quantum dot heterostructures and lasers
by: Nien-Tze Yeh, et al.
Published: (2001)