New Methods to Improve Noise Figure of Microwave CMOS LNAs

碩士 === 國立臺灣大學 === 電信工程學研究所 === 93 === The purpose of this thesis is to develop low noise amplifiers employing commercial standard CMOS processes to achieve better noise performance. Two methods to improve the noise characteristics were used to design LNAs. The first approach for improving noise cha...

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Main Authors: Kuo-Jung Sun, 孫國榮
Other Authors: 王暉
Format: Others
Language:en_US
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/90620421544800333472
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spelling ndltd-TW-093NTU054350862015-12-21T04:04:16Z http://ndltd.ncl.edu.tw/handle/90620421544800333472 New Methods to Improve Noise Figure of Microwave CMOS LNAs 微波金氧半場效電晶體低雜訊放大器改善雜訊的新方法 Kuo-Jung Sun 孫國榮 碩士 國立臺灣大學 電信工程學研究所 93 The purpose of this thesis is to develop low noise amplifiers employing commercial standard CMOS processes to achieve better noise performance. Two methods to improve the noise characteristics were used to design LNAs. The first approach for improving noise characteristics of the LNA is using the device-size selection to optimize the noise performance. By incorporating the series resistances of the on-chip inductors into the noise optimization procedure, the optimum device size can be selected more appropriately. The 10 GHz LNA has a measured gain 11.25 dB with the noise figure below 3 dB. The second approach for improving noise characteristics of the LNA is using the parallel-resonant technique between the two stages of the cascode LNA, the LNA achieved measured noise figure of 2.5 dB, which is about 0.5 dB noise figure improvement over the first circuit. 王暉 2005 學位論文 ; thesis 71 en_US
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description 碩士 === 國立臺灣大學 === 電信工程學研究所 === 93 === The purpose of this thesis is to develop low noise amplifiers employing commercial standard CMOS processes to achieve better noise performance. Two methods to improve the noise characteristics were used to design LNAs. The first approach for improving noise characteristics of the LNA is using the device-size selection to optimize the noise performance. By incorporating the series resistances of the on-chip inductors into the noise optimization procedure, the optimum device size can be selected more appropriately. The 10 GHz LNA has a measured gain 11.25 dB with the noise figure below 3 dB. The second approach for improving noise characteristics of the LNA is using the parallel-resonant technique between the two stages of the cascode LNA, the LNA achieved measured noise figure of 2.5 dB, which is about 0.5 dB noise figure improvement over the first circuit.
author2 王暉
author_facet 王暉
Kuo-Jung Sun
孫國榮
author Kuo-Jung Sun
孫國榮
spellingShingle Kuo-Jung Sun
孫國榮
New Methods to Improve Noise Figure of Microwave CMOS LNAs
author_sort Kuo-Jung Sun
title New Methods to Improve Noise Figure of Microwave CMOS LNAs
title_short New Methods to Improve Noise Figure of Microwave CMOS LNAs
title_full New Methods to Improve Noise Figure of Microwave CMOS LNAs
title_fullStr New Methods to Improve Noise Figure of Microwave CMOS LNAs
title_full_unstemmed New Methods to Improve Noise Figure of Microwave CMOS LNAs
title_sort new methods to improve noise figure of microwave cmos lnas
publishDate 2005
url http://ndltd.ncl.edu.tw/handle/90620421544800333472
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