Investigation of Crystallization Technique for Low-Temperature-Processed Poly-Silicon Thin-Film-Transistor

• Main Authors: Chih-Pang Chang, 張志榜
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/895v2a

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 93 === The use of low-temperature processed polycrystalline silicon thin-film transistors (LTP poly-Si TFTs) as pixel active elements and in peripheral driver circuits has been an important issue in the development of active-matrix flat panel displays (AMFPDs). This thesis studies a number of crystallization techniques for the high performance LTP poly-Si TFTs to achieve system on panel. Firstly, we propose solid-state continue-wave laser (CW-laser) to crystallized poly-Si films, the distinction of excimer laser, CW-laser possessed high stability, reliability, durable and low-cost. In this way, we used laser scanning speed and energy to analysis a status of grain lateral growth and crystallizes mechanism for various condition, furthermore, we succeed to crystallize great grain size more than 10 μm. To compare excimer laser crystallization (ELC) and Sequential lateral solidification (SLS), CW-laser don’t needed extra procedure to carrier out large grain size. On the other hand, solid-phase crystallization (SPC) had better uniformity but require to long annealing time to crystallized；Therefore, we suggested NH3 plasma treatment at server times before crystallized to shorten crystallization times, in this experiment, we have accomplished shorten crystallization times for NH3 plasma treatment, the novel crystallization method to compared the conventional process (SPC 15 hours) just require 2 hours for SPC to demonstrate NH3 plasma treatment efficiently shorten SPC annealing times and improvement electrical characteristics.