The preparation of SrBi2Ta2O9 thin film by RF. Magnetron sputtering
碩士 === 南台科技大學 === 電子工程系 === 93 === The dielectric characteristics of layer structured bismuth material SrBi2Ta1.8V0.2O9 have been well developed. SrBi2Ta1.8V0.2O9 ceramic was used as the target material and SrBi2Ta1.8V0.2O9 thin film was deposited on ITO glass substrate by R.F. magnetron sputtering...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49998636880097292944 |