The study of Photoluminescence on Zn2SiO4:Eu phosphor

碩士 === 國立臺北科技大學 === 材料及資源工程系所 === 93 === The study used solid state reaction to prepare Zn2SiO4:Eu phosphor,and under air or reducing atmosphere to fire Zn2SiO4:Eu phosphor.the result shows that solid-state method firing in air atmosphere,the strongest excitation is 395nm.then we use 395nm eccitate...

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Bibliographic Details
Main Authors: Jhih-Huei Du, 杜志輝
Other Authors: 徐開鴻
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/3bmzh6
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Summary:碩士 === 國立臺北科技大學 === 材料及資源工程系所 === 93 === The study used solid state reaction to prepare Zn2SiO4:Eu phosphor,and under air or reducing atmosphere to fire Zn2SiO4:Eu phosphor.the result shows that solid-state method firing in air atmosphere,the strongest excitation is 395nm.then we use 395nm eccitate phosphor,that emission peak at 578nm、(591nm、597nm)、615nm、652nm、703nm and the spectrum characteristic is sharper that is attributed 5D0→7FJ=0 to 4 multiple transition of Eu3+.In reducing atmosphere fired,Eu3+ change to Eu2+ is due to d→f orbit electron effect,so shows broad f-d transition that emission spectrum is about 450nm due to 4f65d→4f7 transition of Eu2+. To continue studying used sol-gel method to prepare Zn2SiO4:Eu3+ phosphor in air atmosphere,the firing temperature for synthesizing Zn2SiO4 phosphor was found to be 950℃ via sol-gel routes as compared to 1200℃ used for solid-state route,the synthesize Zn2SiO4:Eu3+ phosphor by sol-gel method, that average particle 100nm is less small than solid state method.