Application of the VBIC Model on Heterojunction Bipolar Transistors of Different Sizes

• Main Authors: Hui-fen Hsu, 徐慧芬
• Other Authors: Yang-Hua Chang
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/34895150222146040583

碩士 === 國立雲林科技大學 === 電子與資訊工程研究所 === 93 === This thesis focuses on the VBIC model of HBTs with GaAs substrates. The thesis contains three parts: to study the electrical measurement method of the thermal resistance, the simplification and the optimization process of the HBT model, and to establish the HBT models of different scaling size. The first part is the extraction method of thermal resistance. The thermal conductivity of GaAs substrate is as low as only 1/3 of that of silicon substrate. Since HBTs are operated at high power levels, the devices temperature will significantly rise,which produces the self-heating effect. It will degrade the device performance and reliability. Thermal resistance is the key parameter of thermal effect; it dominates the device characteristics during high power operation. The second part is the simplification and the optimization process of the VBIC model applied for the HBT. Based on this process, users would optimize the VBIC model of HBTs efficiently and exactly. An accurate model is very important for IC design. IC designer will directly acquire device characteristics from the parameters ofthe model. For the model established from DC and high frequency measurement results,the physical properties of the device can be analyzed. The third part is to establish the VBIC model for HBTs in different sizes. Parameters of these models are compared, and the scaling of parameters is discussed.