| Summary: | 碩士 === 國防大學中正理工學院 === 電子工程研究所 === 94 === The research in this thesis focuses on the high energy proton irradiation effect of InAs/GaAs multilayers quantum-dot wafer and photodetector. With high energy proton path simulation, the releases of proton energy and trap distribution in quantum dot multilayers can be predicted. From the results derived by path simulation with 1, 3, and 4 MeV proton, all the protons almost penetrate the multilayers of quantum-dot structures and stop deeply in GaAs substrate.
InAs Quantum Dot multilayer structures/Infrared photodetector have been irradiated by protons with different energies (1, 3, and 4 MeV) and doses (1×109~1×1013 proton/cm2). We had measured and discussed proton irradiation effects from photoluminescence and photoresponsivity spectrum of samples with as grown and post irradiation. When the samples are irradiated with a doses more than 1×1012 proton/cm2, photoluminescence intensities reduce obviously but the wavelength peak values remain same. From photoresponsivity analyses, the intensities decay at irradiated doses of 1×1013 proton/cm2. The experimental results show that the non-radiated electron-hole recombination in 1MeV proton irradiated samples is larger than in 3 MeV proton irradiated samples with same dose.
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