High energy proton irradiation effect of InAs/GaAs multilayers quantum-dot structure based device

碩士 === 國防大學中正理工學院 === 電子工程研究所 === 94 === The research in this thesis focuses on the high energy proton irradiation effect of InAs/GaAs multilayers quantum-dot wafer and photodetector. With high energy proton path simulation, the releases of proton energy and trap distribution in quantum dot multilay...

Full description

Bibliographic Details
Main Authors: Teng-Hua,Yu, 游騰華
Other Authors: Hui-Huang,Hsieh
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/30665351605655635294