The magnetoresistance measurement of nanometer scale Fe/Gd/Fe/MgO/FeCo/MgO(001).
碩士 === 國立中正大學 === 物理所 === 94 === High quality Fe(12nm)/Gd(6nm)/Fe(12nm)/MgO(1.6nm)/FeCo (30nm)/MgO(001) film is fabricated by molecular beam epitaxy in the absence of any external magnetic fields. After structural and magnetic characterizations using XRD and VSM, these films are patterned into oval...
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ndltd-TW-094CCU051980322015-10-13T10:45:18Z http://ndltd.ncl.edu.tw/handle/78399146600883576887 The magnetoresistance measurement of nanometer scale Fe/Gd/Fe/MgO/FeCo/MgO(001). 奈米尺度Fe/Gd/Fe/MgO/FeCo/MgO(001)之磁阻量測 CHIN-HUNG CHIANG 姜慶鴻 碩士 國立中正大學 物理所 94 High quality Fe(12nm)/Gd(6nm)/Fe(12nm)/MgO(1.6nm)/FeCo (30nm)/MgO(001) film is fabricated by molecular beam epitaxy in the absence of any external magnetic fields. After structural and magnetic characterizations using XRD and VSM, these films are patterned into oval-shaped device-array with cell size 40 to 100 square micrometers. Magnetoresistance (MR) of 20 cells is measured using a four-probe ac bridge technique and most of the MR ratios showed ~0.1%. The free layer switching field extracted from MR measurements is ~ 32 Oe which is similar to the coercivity (Hc) of the non-patterned MTJ film. Strikingly, about 1/3 of the cells show clearly negative MR ratios . In addition, the switching filed decreases down to 8 Oe for these cells. This result can be attributed to be similar to the previous observation on rare earth-transition metal GMR effect, where it is claimed that the Gd layer forces the adjacent Fe layer to be antiparallel in the high field state and parallel in a low-field state [1]. As a result, since 4f electron does not contribute to MR it shows an inverse MR effect for the present configuration. Although the present MTJ configuration shows relatively low MR ratio, the interplay between 4f and 3d spins is identified in the present study. Furthermore, the I-V curve of the sample presents non-linear effects, which are consistent with Simmon's theory. In this paper, we also discuss the influence in adding the Gd into MTJ and the way to improve MR ratio in the future. Gung Chern 陳恭 2006 學位論文 ; thesis 66 zh-TW |
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碩士 === 國立中正大學 === 物理所 === 94 === High quality Fe(12nm)/Gd(6nm)/Fe(12nm)/MgO(1.6nm)/FeCo (30nm)/MgO(001) film is fabricated by molecular beam epitaxy in the absence of any external magnetic fields. After structural and magnetic characterizations using XRD and VSM, these films are patterned into oval-shaped device-array with cell size 40 to 100 square micrometers. Magnetoresistance (MR) of 20 cells is measured using a four-probe ac bridge technique and most of the MR ratios showed ~0.1%. The free layer switching field extracted from MR measurements is ~ 32 Oe which is similar to the coercivity (Hc) of the non-patterned MTJ film. Strikingly, about 1/3 of the cells show clearly negative MR ratios . In addition, the switching filed decreases down to 8 Oe for these cells. This result can be attributed to be similar to the previous observation on rare earth-transition metal GMR effect, where it is claimed that the Gd layer forces the adjacent Fe layer to be antiparallel in the high field state and parallel in a low-field state [1]. As a result, since 4f electron does not contribute to MR it shows an inverse MR effect for the present configuration. Although the present MTJ configuration shows relatively low MR ratio, the interplay between 4f and 3d spins is identified in the present study. Furthermore, the I-V curve of the sample presents non-linear effects, which are consistent with Simmon's theory. In this paper, we also discuss the influence in adding the Gd into MTJ and the way to improve MR ratio in the future.
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Gung Chern |
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Gung Chern CHIN-HUNG CHIANG 姜慶鴻 |
author |
CHIN-HUNG CHIANG 姜慶鴻 |
spellingShingle |
CHIN-HUNG CHIANG 姜慶鴻 The magnetoresistance measurement of nanometer scale Fe/Gd/Fe/MgO/FeCo/MgO(001). |
author_sort |
CHIN-HUNG CHIANG |
title |
The magnetoresistance measurement of nanometer scale Fe/Gd/Fe/MgO/FeCo/MgO(001). |
title_short |
The magnetoresistance measurement of nanometer scale Fe/Gd/Fe/MgO/FeCo/MgO(001). |
title_full |
The magnetoresistance measurement of nanometer scale Fe/Gd/Fe/MgO/FeCo/MgO(001). |
title_fullStr |
The magnetoresistance measurement of nanometer scale Fe/Gd/Fe/MgO/FeCo/MgO(001). |
title_full_unstemmed |
The magnetoresistance measurement of nanometer scale Fe/Gd/Fe/MgO/FeCo/MgO(001). |
title_sort |
magnetoresistance measurement of nanometer scale fe/gd/fe/mgo/feco/mgo(001). |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/78399146600883576887 |
work_keys_str_mv |
AT chinhungchiang themagnetoresistancemeasurementofnanometerscalefegdfemgofecomgo001 AT jiāngqìnghóng themagnetoresistancemeasurementofnanometerscalefegdfemgofecomgo001 AT chinhungchiang nàimǐchǐdùfegdfemgofecomgo001zhīcízǔliàngcè AT jiāngqìnghóng nàimǐchǐdùfegdfemgofecomgo001zhīcízǔliàngcè AT chinhungchiang magnetoresistancemeasurementofnanometerscalefegdfemgofecomgo001 AT jiāngqìnghóng magnetoresistancemeasurementofnanometerscalefegdfemgofecomgo001 |
_version_ |
1716832952208326656 |