| Summary: | 碩士 === 長庚大學 === 化工與材料工程研究所 === 94 === The objective of this research is to prepare high density indium tin oxide target by nanosized indium tin oxide (ITO) powders by electrolytically method and high visible light transparency and low electrical resistivity by optimization of RF-sputtrring process using electrolytically derived ITO target. We would discuss the influence of different parameters of electrolytic process and comparison the ITO targets which made by different pH value and different electrolyte and co- precipitation method and thin films sputtering by those targets.
From the experimental results, it is shown that the electrolytic targets made by the same manufactured method with other targets had higher density and lower electrical resistivity. At the same sputtering conditions(mass flow rate of Ar: 20 sccm, operating pressure 6x10-3 torr, sputtering power 50W, substrate temperature 300℃) , the thing films which make by electrolytic target compare to the thin films which makes by co-precipitation method had better electrical and optical property. Furthermore, the electrolysis is the more effectively method to produce ITO powers than co-precipitation method. And the electrolytic method is the better way to produce ITO powder than the co-precipitation method for environmental protection and safe working environment because the less strongly acid is used and poison exhaust gas is exhausted.
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