Fabrication of High Frequency Power Amplifier Using Coplanar Waveguide Transmission-Line Techniques

• Main Authors: Jun-Nan Wang, 王俊男
• Other Authors: Hsien-Chin Chiu
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/31916850268619698766

碩士 === 長庚大學 === 電子工程研究所 === 94 === We proposed a series of the power amplifiers (PAs) designs. The main purpose of this dissertation is utilizing coplanar transmission line, which provides a simply layout of common ground structure. Besides, it also can connect with active device, capacitor and thin-film resistor easily. Power amplifier is fabricated by 0.15 μm InGaAs pHEMT of WIN Semiconductors Corp. as core of the design. In Chapter 3, we designed a X/Ku-band PA. Power amplifier with two supply voltages of gate and drain are -0.3 V and 4 V. The design of this power amplifier exhibits a power gain of 20.4 dB with a output power of 21.8 dBm, an insertion loss (S21) of 20.3 dB, and an input 1-dB compression point (P1dB) of 0 dBm. Additionally, the power-added efficiency (PAE) is 25.5％. Part 2 focused on the implementation of Class E power amplifier. The design procedure follows the theory of class E power amplifier, and is implemented in MMICs and modules. For MMICs, the GaAs pHEMT foundry services are provided by WIN Ltd. The design of this power amplifier exhibits a power gain of 15.2 dB with a output power of 19.8 dBm and an insertion loss (S21) of 14.7 dB. Additionally, the power-added efficiency (PAE) is 33.3％.The overall simulation used ADS (Advance design system) tool. Let us more understand RF circuits designs and their applications from simulating circuit and measuring results.